Surface Potential based modeling of Sheet Charge Density and Estimation of Critical Barrier Thickness in AlGaN/GaN HEMT

被引：9
作者：
Chakrabarty, A. [1 ]
Panda, A. K. [2 ]
Swain, R. [3 ]
机构：
[1] Siksha O Anusandhan Deemed Be Univ, Dept Elect & Commun Engn, ITER, Bhubaneswar 751030, Odisha, India
[2] Natl Inst Sci & Technol, Dept Elect & Commun Engn, Berhampur 761008, Odisha, India
[3] Parala Maharaja Engn Coll, Dept Elect & Telecommun, Berhampur 761003, Odisha, India
来源：
2019 IEEE 16TH INDIA COUNCIL INTERNATIONAL CONFERENCE (IEEE INDICON 2019) | 2019年
关键词：
2DEG; Critical thickness; HEMT; Surface donor; PIEZOELECTRIC POLARIZATION; LAYER;
D O I：
10.1109/indicon47234.2019.9030295
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
The two dimensional electron gas (2DEG) density in AlGaN/GaN HEMT is modeled by considering surface potential of barrier layer. The critical thickness is calculated to be 3.3nm for Al0.27Ga0.73N/GaN HEMT which is in agreement with the experimentally observed value of 3nm for the same mole fraction of Al. The model also depicts that, critical barrier thickness decreases with increase in Al mole fraction.
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页数：4
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