Sequential Brush Grafting for Chemically and Dimensionally Tolerant Directed Self-Assembly of Block Copolymers

被引:4
作者
Chang, Boyce S. [1 ]
Loo, Whitney S. [2 ]
Yu, Beihang [1 ]
Dhuey, Scott [1 ]
Wan, Lei [3 ]
Nealey, Paul F. [1 ,2 ,4 ]
Ruiz, Ricardo [1 ]
机构
[1] Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA
[2] Univ Chicago, Pritzker Sch Mol Engn, Chicago, IL 60637 USA
[3] Western Digital, San Jose, CA 95119 USA
[4] Mat Sci Div, Argonne Natl Lab, Lemont, IL 60439 USA
关键词
directed self-assembly; block copolymer; thin films; advanced lithography; defectivity; LINE EDGE ROUGHNESS; DENSITY MULTIPLICATION; PATTERNS; FABRICATION; DESIGN;
D O I
10.1021/acsami.2c16508
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report a method for the directed self-assembly (DSA) of block copolymers (BCPs) in which a first BCP film deploys homopolymer brushes, or "inks", that sequentially graft onto the substrate's surface via the interpenetration of polymer molecules during the thermal annealing of the polymer film on top of existing polymer brushes. By selecting polymer "inks" with the desired chemistry and appropriate relative molecular weights, it is possible to use brush interpenetration as a powerful technique to generate self-registered chemical contrast patterns at the same frequency as that of the domains of the BCP. The result is a process with a higher tolerance to dimensional and chemical imperfections in the guiding patterns, which we showcase by implementing DSA using homopolymer brushes for the guiding features as opposed to more robust cross-linkable mats. We find that the use of "inks" does not compromise the line width roughness, and the quality of the DSA as a lithographic mask is verified by implementing a robust "dry lift-off" pattern transfer.
引用
收藏
页码:2020 / 2029
页数:10
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