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Enhancing the photoelectrochemical properties of quantum dot-sensitized solar cells based on TiO2 nanorods by using fast hole transfer channels
被引:5
|作者:
Lu, Yongjuan
[1
]
Jia, Junhong
[2
]
Lu, Cheng
[2
]
Huang, Jing
[1
]
Feng, Xiaochun
[2
]
机构:
[1] Northwest Minzu Univ, Sch Chem Engn, Key Lab Utilify Environm Friendly Composite Mat &, Lanzhou 730030, Gansu, Peoples R China
[2] Lanzhou Inst Chem Phys, Lanzhou 730000, Gansu, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Thin films;
TiO2/Bi2S3/CuS;
Hole transfer layer;
Semiconductor;
Quantum dot-sensitized solar cell;
EFFICIENCY;
GROWTH;
D O I:
10.1016/j.matlet.2019.01.110
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
To search a viable way to enhance the photoconversion efficiency (PCE) of Quantum dot-sensitized solar cells (QDSSCs), we have designed a method of introducing a hole transporting layer (HTL) of p-type CuS to form the TiO2/Bi2S3/CuS composite electrodes. The morphology, crystal structure, optical properties and PEC performance of TiO2/Bi2S3/CuS composite electrodes were investigated in detail. The results showed that the photocurrent density of TiO2/Bi2S3/CuS was eight times higher than that of single TiO2 and 1.51 times higher than that of TiO2/Bi2S3 NRs. Therefore, this study provides helpful insights into rational design and fabrication of novel and efficient method for improving PEC performance of the QDSSCs. (C) 2019 Published by Elsevier B.V.
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页码:176 / 179
页数:4
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