Intrinsic Josephson properties in (Hg, Re)Ba2Ca3Cu4O10+δ single crystals

被引：3

作者：

Ueda, S. ^{[1
]}

Okutsu, T. ^{[1
]}

Kubo, Y. ^{[1
]}

Ishii, S. ^{[1
]}

Tsuda, S. ^{[1
]}

Yamaguchi, T. ^{[1
]}

Horii, S. ^{[2
]}

Shimoyama, J. ^{[2
]}

Kishio, K. ^{[2
]}

Takano, Y. ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Nano Frontier Mat Grp, Tsukuba, Ibaraki 3050047, Japan

[2] Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138556, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2008年 / 468卷 / 15-20期

关键词：

Hg-based superconductor; Re-doping; intrinsic Josephson junctions; I-V characteristics;

D O I：

10.1016/j.physc.2008.05.167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the I-V characteristics of intrinsic Josephson junctions (IJJs) in (Hg, Re)Ba2Ca3Cu4O10+delta [Hg(Re)1234]. Two types of inline junctions with different dimensions were fabricated using a focused Ga+ ion beam from Hg(Re)1234 single crystals grown by the flux method. In the I-V curves of the IJJs, multiple-branches with hysteresis structure similar to those of other HTS IJJs were successfully observed above 80 K. The IJJs with dimension of 1.2 x 0.65 mu m(2) showed almost step by step switching, while the other with larger size showed uniform-stack switching, which indicated that the switching dynamics in the IJJs were affected by the coupling between junctions. The critical current density, J(c), of both IJJs were high similar to 320 kA/cm(2) at 4.2 K due to its high T-c and relatively low anisotropy parameter gamma = (m(c)(center dot)/m(ab)(center dot))(1/2) similar to 25. (c) 2008 Published by Elsevier B.V.

引用

页码：1925 / 1928

页数：4

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