Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal-Insulator-Metal Tunneling Devices

被引：11

作者：

He, Yanwei ^{[1
]}

Tian, Hao ^{[1
]}

Das, Protik ^{[1
]}

Cui, Zhenjun ^{[1
]}

Pena, Pedro ^{[1
]}

Chiang, Ivan ^{[1
]}

Shi, Wenhao ^{[1
]}

Xu, Long ^{[1
]}

Li, Yuan ^{[1
]}

Yang, Tianchen ^{[1
]}

Isarraraz, Miguel ^{[1
]}

Ozkan, Cengiz S. ^{[2
,3
]}

Ozkan, Mihrimah ^{[1
]}

Lake, Roger K. ^{[1
]}

Liu, Jianlin ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA

[2] Univ Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA

[3] Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2020年 / 12卷 / 31期

基金：

美国国家科学基金会;

关键词：

hexagonal boron nitride (h-BN); molecular beam epitaxy (MBE); substrate engineering; two-dimensional (2D); electrical device; FIELD-EFFECT TRANSISTORS; DIELECTRIC-BREAKDOWN; GRAPHENE; EXFOLIATION; TEMPERATURE; DEPOSITION; TRANSPORT; IMAGE;

D O I：

10.1021/acsami.0c07201

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two-dimensional (2D) hexagonal boron nitride (h-BN) plays a significant role in nanoscale electrical and optical devices because of its superior properties. However, the difficulties in the controllable growth of high-quality films hinder its applications. One of the crucial factors that influence the quality of the films obtained via epitaxy is the substrate property. Here, we report a study of 2D h-BN growth on carburized Ni substrates using molecular beam epitaxy. It was found that the carburization of Ni substrates with different surface orientations leads to different kinetics of h-BN growth. While the carburization of Ni(100) enhances the h-BN growth, the speed of the h-BN growth on carburized Ni(111) reduces. Asgrown continuous single-layer h-BN films are used to fabricate Ni/h-BN/Ni metal-insulator-metal (MIM) devices, which demonstrate a high breakdown electric field of 12.9 MV/cm.

引用

页码：35318 / 35327

页数：10

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