Fabrication technology of sol-gel Al2O3 films for organic field-effect transistors

被引：0

作者：

Avdeev, Sergey P. ^{[1
]}

Gusev, Evgeny Yu ^{[1
,2
]}

机构：

[1] Southern Fed Univ, Inst Nanotechnol Elect & Equipment Engn, 2 Shevchenko St, Taganrog 347922, Rostov Region, Russia

[2] Southern Fed Univ, Res & Educ Ctr Nanotechnol, 2 Shevchenko St, Taganrog 347922, Rostov Region, Russia

来源：

INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2018 | 2019年 / 11022卷

关键词：

Al2O3; sol-gel synthesis; annealing; electron-beam; dielectric constant; atomic force microscopy; capacitive-voltage characteristics; THIN-FILMS; ELECTRICAL-PROPERTIES; SPRAY-PYROLYSIS;

D O I：

10.1117/12.2522121

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A sol-gel synthesis of alumina-based films and followed single crystal formation by thermal fields in vacuum are investigated that can be applied as gate dielectrics for organic field-effect transistors. The results showed that the values of roughness and thickness of the sol-gel Al2O3 film decreased by almost 2 times with increasing temperature annealing in vacuum. It is established that the dielectric constant of sol-gel films decreasing from 9.1 to 7.3 through vacuum annealing at 1000 degrees C acquiring typical value of crystalline sapphire.

引用

收藏

页数：6

相关论文

共 19 条

[1] A study of the dielectric characteristics of aluminum oxide thin films deposited by spray pyrolysis from Al(acac)3 [J].

Aguilar-Frutis, M ;

Garcia, M ;

Falcony, C ;

Plesch, G ;

Jimenez-Sandoval, S .

THIN SOLID FILMS, 2001, 389 (1-2) :200-206

[2]

An KS, 2003, B KOREAN CHEM SOC, V24, P1659

[3]

Avdeev S. P., 1998, PHYS CHEM MAT PROCES, V2, P77

[4] Electron-beam processing effect on photoemitting-structures parameters and the noise factor of microchannel plates [J].

Avdeev, Sergey P. ;

Kravchenko, Aleksandr A. ;

Gusev, Evgeny Yu. ;

Petrov, Sergey N. .

19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, 2007, 6636

[5] A new low voltage fast SONOS memory with high-k dielectric [J].

Gritsenko, VA ;

Nasyrov, KA ;

Novikov, YN ;

Aseev, AL ;

Yoon, SY ;

Lee, JW ;

Lee, EH ;

Kim, CW .

SOLID-STATE ELECTRONICS, 2003, 47 (10) :1651-1656

[6] Optical properties of amorphous Al2O3 thin films prepared by a sol-gel process [J].

Hu, Baofu ;

Yao, Manwen ;

Xiao, Ruihua ;

Chen, Jianwen ;

Yao, Xi .

CERAMICS INTERNATIONAL, 2014, 40 (09) :14133-14139

[7] Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells [J].

Huang, Haibing ;

Modanese, Chiara ;

Sun, Shenghua ;

von Gastrow, Guillaume ;

Wang, Jianbo ;

Pasanen, Toni P. ;

Li, Shuo ;

Wang, Lichun ;

Bao, Yameng ;

Zhu, Zhen ;

Sneck, Sami ;

Savin, Hele .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 186 :356-364

[8] Electrical properties of amorphous aluminum oxide thin films [J].

Katiyar, P ;

Jin, C ;

Narayan, RJ .

ACTA MATERIALIA, 2005, 53 (09) :2617-2622

[9] Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100) [J].

Klein, TM ;

Niu, D ;

Epling, WS ;

Li, W ;

Maher, DM ;

Hobbs, CC ;

Hegde, RI ;

Baumvol, IJR ;

Parsons, GN .

APPLIED PHYSICS LETTERS, 1999, 75 (25) :4001-4003

[10] Electrical properties of Al2O3 gate dielectrics [J].

Lin, CH ;

Kang, JF ;

Han, DD ;

Tian, DY ;

Wang, W ;

Zhang, JH ;

Liu, M ;

Liu, XY ;

Han, RQ .

MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) :830-834