Broad near-infrared fluorescence properties of Nd-doped PbClF crystals

被引：2
作者：
Wang, Qingguo [1 ,2 ]
Su, Liangbi [1 ]
Li, Hongjun [1 ]
Zheng, Lihe [1 ]
Xu, Xiaodong [1 ]
Wu, Feng [1 ]
Tang, Huili [1 ]
Jiang, Dapeng [1 ]
Chen, Weichao [1 ]
Xu, Jun [1 ]
机构：
[1] Chinese Acad Sci, Key Lab Transparent & Optofunct Adv Inorgan Mat, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2012年 / 47卷 / 05期
基金：
美国国家科学基金会;
关键词：
PbClF; Bridgman method; spectroscopic properties; MICROCHIP LASERS; SINGLE-CRYSTAL; MODE-LOCKING; GLASS-LASER; KGW LASER; MU-M; DIODE; PBFCL; EFFICIENT; SPECTRA;
D O I：
10.1002/crat.201100577
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Nd-doped PbClF crystals were grown with modified Bridgman method. Broad and flat emission band at 1.0 mu m was observed. The FWHM value of 0.0091 wt.% Nd3+-doped PbClF crystal at 1064 nm reached up to 30 nm with the peak emission cross-section of 1.05 x 10(-19) cm2. All the results indicated that Nd-doped PbClF crystal should be a promising tunable and ultrafast laser material. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码：585 / 590
页数：6
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共 28 条
  • [1] Laser action in a cw diode-pumped Nd:Ca3Sc2Ge3O12 crystal
    Agnesi, A
    Dell'Acqua, S
    Guandalini, A
    Reali, G
    Toncelli, A
    Tonelli, M
    Cavalli, E
    [J]. APPLIED PHYSICS B-LASERS AND OPTICS, 2000, 71 (02): : 153 - 156
  • [2] 80-fs Nd: silicate glass laser pumped by a single-mode 200-mW diode
    Agnesi, Antonio
    Greborio, Alessandro
    Pirzio, Federico
    Reali, Giancarlo
    [J]. OPTICS EXPRESS, 2010, 18 (10): : 10098 - 10103
  • [3] Multiwatt CW diode end-pumped Nd:YAP laser at 1.08 and 1.34 μm:: influence of Nd doping level
    Boucher, M
    Musset, O
    Boquillon, JP
    Georgiou, E
    [J]. OPTICS COMMUNICATIONS, 2002, 212 (1-3) : 139 - 148
  • [4] Ultrahigh resolution real time OCT imaging using a compact femtosecond Nd:Glass laser and nonlinear fiber
    Bourquin, S
    Aguirre, AD
    Hartl, I
    Hsiung, P
    Ko, TH
    Fujimoto, JG
    Birks, TA
    Wadsworth, WJ
    Bünting, U
    Kopf, D
    [J]. OPTICS EXPRESS, 2003, 11 (24): : 3290 - 3297
  • [5] Passively Q-switched 180-ps Nd:LaSc3(BO3)(4) microchip laser
    Braun, B
    Kartner, FX
    Keller, U
    Meyn, JP
    Huber, G
    [J]. OPTICS LETTERS, 1996, 21 (06) : 405 - 407
  • [6] High-power diode-bar end-pumped Nd:YLF laser at 1.053 μm
    Clarkson, WA
    Hardman, PJ
    Hanna, DC
    [J]. OPTICS LETTERS, 1998, 23 (17) : 1363 - 1365
  • [7] Novel diode-pumped infrared tunable laser system for multi-photon microscopy
    Deguil, N
    Mottay, E
    Salin, F
    Legros, P
    Choquet, D
    [J]. MICROSCOPY RESEARCH AND TECHNIQUE, 2004, 63 (01) : 23 - 26
  • [8] Highly doped Nd:YAG crystal used for microchip lasers
    Dong, J
    Deng, P
    Gan, F
    Urata, Y
    Hua, R
    Wada, S
    Tashiro, H
    [J]. OPTICS COMMUNICATIONS, 2001, 197 (4-6) : 413 - 418
  • [9] Yb3+ Doped (Ca,Sr,Ba)F2 for High Power Laser Applications
    Doualan, J. L.
    Camy, P.
    Benayad, A.
    Menard, V.
    Moncorge, R.
    Boudeile, J.
    Druon, F.
    Balembois, F.
    Georges, P.
    [J]. LASER PHYSICS, 2010, 20 (02) : 533 - 536
  • [10] PHOTOLUMINESCENCE OF PBFCL AND PBFBR SINGLE-CRYSTALS
    EIJKELENKAMP, AJH
    [J]. SOLID STATE COMMUNICATIONS, 1976, 18 (03) : 295 - 296
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