Thiophene-Fused Nickel Dithiolenes: A Synthetic Scaffold for Highly Delocalized π-Electron Systems

被引:16
作者
Amb, Chad M. [1 ]
Heth, Christopher L. [1 ]
Evenson, Sean J. [1 ]
Pokhodnya, Konstantin I. [2 ]
Rasmussen, Seth C. [1 ]
机构
[1] North Dakota State Univ, Dept Chem & Biochem, Dept 2735,POB 6050, Fargo, ND 58108 USA
[2] North Dakota State Univ, Ctr Nanoscale Sci & Engn, Fargo, ND 58102 USA
基金
美国国家科学基金会;
关键词
METAL-COMPLEXES; CRYSTAL-STRUCTURES; PHYSICAL-PROPERTIES; MAGNETIC-PROPERTIES; NI; LIGANDS; REDOX; PD; SPECTROSCOPY; COBALT;
D O I
10.1021/acs.inorgchem.6b01513
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
A series of thiophene-fused nickel dithiolene complexes have been prepared via synthetic methods which allow the addition of peripheral aryl groups to the fused thiophene of the dithiolene ligand, thus providing access to a range of structural and electronic modifications to the dithiolene core. X-ray structural studies of the anionic complexes show that the peripheral aryl rings lie in near-perfect coplanarity to the dithiolene core and can form 3r-stacked columns with N-methylpyridinium cations. Density functional theory calculations show significant delocalization of the frontier orbital electron density into the peripheral aryl rings. The complexes exhibit tunable, intense near-IR (NIR) absorption in the range of 1076-1160 nm with molar absorptivity as high as 25100 M-1 cm(-1) in solution. The electronic tunability as well as the desirable solid-state packing arrangements of these systems suggests significant potential as NIR-absorbing materials for optoelectronic applications.
引用
收藏
页码:10978 / 10989
页数:12
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