The separate and combined effects of VUV radiation and fast atomic oxygen on Teflon FEP and silicon carbide

被引:0
作者
Skurat, VE
Barbashev, EA
Budashov, IA
Dorofeev, YI
Nikiforov, AP
Ternovoy, AI
VanEesbeek, M
Levadou, F
机构
来源
7TH INTERNATIONAL SYMPOSIUM ON MATERIALS IN SPACE ENVIRONMENT | 1997年 / 399卷
关键词
D O I
暂无
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
New results are given in continuation of a previous investigation [1] of VUV radiation on Teflon FEP and PTFE films. The changes in mechanical properties (tensile strength sigma and relative elongation at rupture epsilon) of Teflon FEP films (mainly 12.5, 25 mu m and 75 mu m, also one-side silvered Teflon FEP thermal control material 125 mu m), were measured as a result of illuminations with light from various VUV sources: resonance Xe lamp (147.0nm), Kr lamp (123.6nm), Hg lamp (184.9 and 254nm), deuterium lamps with silica window (lambda>177nm) or magnesium fluoride (lambda>115nm) in high vacuum conditions and at various temperatures of film samples (25-30 and 120-150 degrees C). Mass losses from Teflon FEP films under the separate and combined action of fast (2-4eV) atomic oxygen beam (about 1.10(16)atom/cm(2).s) and VUV light (147.0nm) from resonance Xe lamp (about 1x10(14) photon/cm(2)s) were measured. Erosion of Teflon FEP surfaces by VUV light resulted in the evolution of fluorine and fluorocarbon fragments of CnFm type (n can vary from 1 to at least 10, m less than or equal to 2n + 2) into the gas phase. These volatile products can induce etching of silicon-based materials (like Silica or SiC) or growth of fluorocarbon deposits on adjacent surfaces. These effects were studied by atomic force microscopy for SiC samples placed in the vicinity of Teflon FEP films illuminated with VUV light. A general picture is proposed to account for erosion and deterioration of mechanical properties of Teflon FEP films by VUV radiation.
引用
收藏
页码:267 / 279
页数:3
相关论文
共 50 条
[41]   RADIATION EFFECTS OF FAST-NEUTRONS IN SILICON DIFFUSED DETECTORS [J].
SACHELARIE, D ;
DRAGAN, M ;
STOICA, M ;
SACHELARIE, M .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1981, 65 (01) :379-388
[42]   Electron-ion coupling effects on radiation damage in cubic silicon carbide [J].
Zhang, Chao ;
Mao, Fei ;
Zhang, Feng-Shou .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2013, 25 (23)
[43]   Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs [J].
Akturk, A. ;
McGarrity, J. M. ;
Potbhare, S. ;
Goldsman, N. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (06) :3258-3264
[44]   Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation [J].
Zhang, Yanwen ;
Xue, Haizhou ;
Zarkadoula, Eva ;
Sachan, Ritesh ;
Ostrouchov, Christopher ;
Liu, Peng ;
Wang, Xue-lin ;
Zhang, Shuo ;
Wang, Tie Shan ;
Weber, William J. .
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2017, 21 (06) :285-298
[45]   ENERGETIC ION RADIATION EFFECTS ON A SILICON CARBIDE (SiC) MULTIMODE RESONATING DIAPHRAGM [J].
Chen, Hailong ;
Pashaei, Vida ;
Liao, Wenjun ;
Arutt, Charles N. ;
Jia, Hao ;
McCurdy, Michael W. ;
Zorman, Christian A. ;
Reed, Robert A. ;
Schrimpf, Ronald D. ;
Alles, Michael L. ;
Feng, Philip X-L .
2017 19TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS), 2017, :990-993
[46]   Atomic oxygen adsorption on the silicon-doped hafnium carbide (001) surface from first principles [J].
Liu, Dongliang ;
Jin, Yongzhong ;
Deng, Jianguo ;
He, Cheng .
COMPUTATIONAL MATERIALS SCIENCE, 2011, 50 (08) :2530-2534
[47]   A combined approach to the simulation of ionizing radiation effects in silicon devices [J].
Ozdemir, T. ;
Meroli, S. ;
Pilicer, E. ;
Mencaroni, A. ;
Alpat, B. ;
Ozkorucuklu, S. ;
Passeri, D. ;
Placidi, P. ;
Servoli, L. .
JOURNAL OF INSTRUMENTATION, 2011, 6
[48]   OXYGEN ON CLEAVED SILICON (111) - EFFECTS OF ATOMIC STEPS AND RESIDUAL GASES [J].
KASUPKE, N ;
HENZLER, M .
SURFACE SCIENCE, 1980, 92 (2-3) :407-416
[49]   THE EFFECTS OF ATOMIC OXYGEN AND ULTRAVIOLET-RADIATION ON 2 ARAMID MATERIALS [J].
POWELL, SC ;
KIEFER, RL ;
PATE, PL ;
ORWOLL, RA ;
LONG, SAT .
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 201 :45-POLY
[50]   Properties of 4H silicon carbide detectors in the radiation detection of 86 MeV oxygen particles [J].
Liu, L. Y. ;
Liu, J. L. ;
Chen, L. ;
Zhang, Z. B. ;
Jin, P. ;
Ruan, J. L. ;
Chen, G. ;
Liu, A. ;
Bai, S. ;
Ouyang, X. P. .
DIAMOND AND RELATED MATERIALS, 2017, 73 :177-181