Structural and Raman studies of Ga2O3 obtained on GaAs substrate

被引：20
作者：
Galvan, C. [1 ]
Galvan, M. [2 ]
Arias-Ceron, J. S. [2 ]
Lopez-Luna, E. [1 ]
Vilchis, H. [1 ]
Sanchez-R, V. M. [2 ]
机构：
[1] UASLP, Coordinat Innovat & Applicat Sci & Technol, San Luis Potosi 78120, Mexico
[2] Inst Politecn Nacl, CINVESTAV, Dept Elect Engn, Solid State Elect Sect, Mexico City 07360, DF, Mexico
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2016年 / 41卷
关键词：
Gallium oxide; Nanostructures; Raman scattering; Thermal oxidation; OXIDE THIN-FILMS; GALLIUM OXIDE; OPTICAL-PROPERTIES; BETA-GA2O3;
D O I：
10.1016/j.mssp.2015.10.027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ga2O3 were synthesized by controlled thermal oxidation of GaAs substrates at atmospheric pressure. The crystalline structure and vibrational modes were studied as a function of growth temperature within a range of 750-950 degrees C. Samples grown in the range of 750-850 degrees C present nanostructured surface and the samples obtained at higher temperature are oriented to the (004) beta-phase. Crystalline structure was confirmed by X-ray diffraction, and Raman scattering studies. The evolution of the surface morphology was analyzed by atomic force microscopy, and scanning electron microscopy. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：513 / 518
页数：6
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