The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs

被引：63

作者：

Adan, Alberto O. ^{[1
]}

Tanaka, Daisuke ^{[1
]}

Burgyan, Lajos ^{[1
]}

Kakizaki, Yuji ^{[1
]}

机构：

[1] LTEC Corp, Itami, Hyogo, Japan

来源：

IEEE POWER ELECTRONICS MAGAZINE | 2019年 / 6卷 / 02期

关键词：

Silicon carbide - III-V semiconductors - Packaging materials - Semiconducting silicon compounds - Gallium nitride - Power transistors - Wide band gap semiconductors;

D O I：

10.1109/MPEL.2019.2909592

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There is continuous activity to increase the efficiency and reduce the size of power electronic systems and modules developed for transportation and automotive electrification applications [1], [2]. One of the key requirements for achieving these objectives is to operate semiconductor devices at higher power density and junction temperature (Tj max), while maintaining high reliability. The emergence of wideband-gap (WBG) semiconductors [silicon carbide (SiC) and gallium nitride (GaN)] [9] and new high-temperature die-attach methods, interconnects, and packaging materials [9] enables power-device manufacturers to increase Tj max from Tj = 150 °C to Tj = 175 °C and, further, to Tj = 200 °C [3]-[10]. © 2014 IEEE.

引用

页码：36 / 47

页数：12

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