Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments

被引：11

作者：

Fu, Ssu-I ^{[1
]}

Cheng, Shiou-Ying ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2006年 / 39卷 / 05期

关键词：

sulfur treatment; offset voltage; current gain; microwave characteristics;

D O I：

10.1016/j.spmi.2005.10.002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The characteristics of the InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatment are studied and demonstrated. Based on the use of sulfur passivation, the series resistance of a base-emitter B-E junction can be effectively reduced and the series resistance dominant regimes (decrease of current gain) are presented at a higher collector current regime. The device with sulfur treatment can be operated under extremely low collector current (I-C congruent to 10(-11) A) region, which offers the promise for low-power electronics applications. It is known that, from experimental results, the too long time for sulfur treatment is not necessary. Furthermore, the studied devices with sulfur treatment can remarkably reduce the collector-emitter offset voltage Delta V-CE and emitter size effect, and improve the high-frequency performance. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：436 / 445

页数：10

共 10 条

[1] COLLECTOR-EMITTER OFFSET VOLTAGE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

CHAND, N ;

FISCHER, R ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :313-315

[2] Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs [J].

Chen, CY ;

Fu, SI ;

Cheng, SY ;

Chang, CY ;

Tsai, CH ;

Yen, CH ;

Tsai, SF ;

Liu, RC ;

Liu, WC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (12) :1963-1971

[3] dc characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT) [J].

Chen, CY ;

Cheng, SY ;

Chiou, WH ;

Chuang, HM ;

Liu, RC ;

Yen, CH ;

Chen, JY ;

Cheng, CC ;

Liu, WC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (04) :874-879

[4] Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike [J].

Cheng, SY .

SUPERLATTICES AND MICROSTRUCTURES, 2001, 30 (02) :111-117

[5] Comparative study on dc characteristics of In0.49Ga0.51P-channel heterostructure field-effect transistors with different gate metals [J].

Chuang, HM ;

Wang, CK ;

Lin, KW ;

Chiou, WH ;

Chen, CY ;

Liu, WC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (04) :319-324

[6] An improved In0.5Ga0.5P/GaAs double heterostructure-emitter bipolar transistor using emitter edge-thinning technique [J].

Lin, YS ;

Wu, YH ;

Su, JS ;

Hsu, WC ;

Ho, SD ;

Lin, W .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (4A) :2007-2009

[7] Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs δ-doped single heterojunction bipolar transistors using an InGaP passivation layer [J].

Lour, WS ;

Hsieh, JL .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (08) :847-851

[8] High-gain, low offset voltage, and zero potential spike by InGaP/GaAs delta-doped single heterojunction bipolar transistor (delta-SHBT) [J].

Lour, WS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (02) :346-348

[9] ETCHING CHARACTERISTICS OF ALXGA1-XAS IN (NH4)2SX SOLUTIONS [J].

SEO, JW ;

KOKER, T ;

AGARWALA, S ;

ADESIDA, I .

APPLIED PHYSICS LETTERS, 1992, 60 (09) :1114-1116

[10] Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface [J].

Tan, SW ;

Chen, HR ;

Chu, MY ;

Chen, WT ;

Lin, AH ;

Hsu, MK ;

Lin, TS ;

Lour, WS .

SUPERLATTICES AND MICROSTRUCTURES, 2005, 37 (06) :401-409

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