High single-pulse energy passively Q-switched laser based on Yb,Gd:SrF2 crystal

被引:4
作者
Zhao, Mengfei [1 ,2 ]
Wang, Cong [1 ,2 ]
Hao, Qianqian [1 ,2 ]
Zou, Zhengting [3 ,4 ]
Liu, Jie [1 ,2 ]
Fan, Xiuwei [1 ,2 ]
Su, Liangbi [3 ,4 ]
机构
[1] Shandong Normal Univ, Sch Phys & Elect, Shandong Prov Engn & Tech Ctr Light Manipulat, Jinan 250358, Peoples R China
[2] Shandong Normal Univ, Sch Phys & Elect, Shandong Prov Key Lab Opt & Photon Device, Jinan 250358, Peoples R China
[3] Chinese Acad Sci, Synthet Single Crystal Res Ctr, Shanghai Inst Ceram, CAS Key Lab Transparent & Optofunct Inorgan Mat, Shanghai 201899, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Ceram, State Ley Lab High Performance Ceram & Superfine, Shanghai 201899, Peoples R China
基金
中国国家自然科学基金;
关键词
diode pumping; solid-state lasers; passive Q-switching; FEMTOSECOND; OPERATION; CR4+YAG;
D O I
10.3788/COL202018.101401
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report on laser diode (LD) pumped passively Q-switched Yb,Gd:SrF2 lasers with high single-pulse energy for the first time, to the best of our knowledge. In addition, a stable Q-switched laser based on a Cr4+:Y3Al5O12 saturable absorber was demonstrated. The maximum output power of the Q-switched laser obtained was 495 mW, with a pulse width and a pulse repetition rate of 233 ns and 1.238 kHz, respectively. The corresponding single-pulse energy and the peak power were as high as 400 mu J and 1.714 kW. The laser was operated under a transverse electromagnetic mode, and the beam quality was near-diffraction-limited.
引用
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页数:5
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