X-ray photoelectron spectroscopy studies of silicon suboxides obtained by the sol-gel method

被引：4
|
作者：
Santucci, S [1 ]
Cordeschi, E [1 ]
Lozzi, L [1 ]
Passacantando, M [1 ]
Picozzi, P [1 ]
degliEsposti, LM [1 ]
机构：
[1] ISRIM,I-05100 TERNI,ITALY
来源：
JOURNAL OF MATERIALS RESEARCH | 1997年 / 12卷 / 01期
关键词：
PHOTOEMISSION-SPECTROSCOPY; STEEL SHEETS; THIN-FILMS; SIO2; STOICHIOMETRY; CRYSTALLINE; CHEMISTRY; SURFACE; STATES; AUGER;
D O I：
10.1557/JMR.1997.0016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon suboxides thin films obtained by sol-gel and dip-coating methods, starting from a sol containing different percentages of TEOS (tetraethoxysilane) and MTEOS (methyltriethoxysilane), were grown onto silicon substrates. The samples were annealed at 100, 300, and 500 degrees C, and the electronic and compositional properties of the surface were studied by x-ray photoelectron spectroscopy (XPS) detecting the Si ''Auger parameter'' and the valence band. The effects produced by an ion-sputtering treatment of the samples were also studied.
引用
收藏
页码：100 / 105
页数：6
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