Effect of low energy electron beam irradiation on Shockley partial dislocations bounding stacking faults introduced by plastic deformation in 4H-SiC in its brittle temperature range

被引：12

作者：

Regula, G. ^{[1
]}

Yakimov, E. B. ^{[2
,3
]}

机构：

[1] Aix Marseille Univ, CNRS, IM2NP, UMR 7334, F-13397 Marseille, France

[2] Inst Microelect Technol RAS, Chernogolovka 142432, Russia

[3] Natl Univ Sci & Technol MISiS, Moscow, Russia

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 99卷

基金：

俄罗斯基础研究基金会;

关键词：

4H-SiC; Stacking fault; Partial dislocation; CL; REDG; LEEBI; I-N-DIODES; MULTIPLICITY;

D O I：

10.1016/j.spmi.2016.02.015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Low energy electron beam irradiation (LEEBI) effect on Shockley-type stacking faults introduced in 4H-SiC by plastic deformation have been studied by cathodoluminescence. It is shown that LEEBI does not enhance the mobility of dislocations dragging stacking faults under plastic deformation. Contrary new stacking faults are created under LEEBI. The obtained results are explained under assumption that the stacking faults introduced in 4H-SiC under deformation at moderate temperatures and by LEEBI at room temperature are dragged by partial dislocations of different types. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：226 / 230

页数：5

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