共 15 条
Properties of Nd-doped Bi4Ti3O12 thin films grown by metalorganic solution decomposition
被引:5
作者:

Yang, CH
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h-index: 0
机构:
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

Wang, Z
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h-index: 0
机构:
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

Zhai, JP
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h-index: 0
机构:
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

Ma, GP
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h-index: 0
机构:
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

Sun, XQ
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h-index: 0
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Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

Yi, XJ
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h-index: 0
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Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

Han, JR
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h-index: 0
机构:
Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
机构:
[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
基金:
中国国家自然科学基金;
关键词:
atomic force microscopy;
perovskites;
dielectric materials;
D O I:
10.1016/j.jcrysgro.2004.01.002
中图分类号:
O7 [晶体学];
学科分类号:
0702 ;
070205 ;
0703 ;
080501 ;
摘要:
Neodymium-doped Bi4Ti3O12 (Bi3.15Nd0.85Ti3O12) films have been synthesized by metalorganic solution decomposition method and deposited on SiO2/p-Si(111) substrate by spin coating. The structural characteristic and crystallization of the films were examined by X-ray diffraction. The surface morphology and quality were studied using atomic force microscope. The films exhibit good insulating property and resistance to breakdown. The clockwise hysteresis curve is referred to as polarization type switching, and the memory window is about 2.5V. The dielectric constant and dissipation factor at a frequency of 100kHz are 110 and 0.137, respectively, at room temperature. (C) 2004 Elsevier B.V. All rights reserved.
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页码:312 / 315
页数:4
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- [1] Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) : 4769 - 4775Chon, U论文数: 0 引用数: 0 h-index: 0机构: Res Inst Ind Sci & Technol, Ctr Mat Res, Pohang 790330, South Korea Res Inst Ind Sci & Technol, Ctr Mat Res, Pohang 790330, South KoreaShim, JS论文数: 0 引用数: 0 h-index: 0机构: Res Inst Ind Sci & Technol, Ctr Mat Res, Pohang 790330, South KoreaJang, HM论文数: 0 引用数: 0 h-index: 0机构: Res Inst Ind Sci & Technol, Ctr Mat Res, Pohang 790330, South Korea
- [2] Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations[J]. APPLIED PHYSICS LETTERS, 2001, 79 (19) : 3137 - 3139Chon, U论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South KoreaKim, KB论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South KoreaJang, HM论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South KoreaYi, GC论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
- [3] Bi3.25La0.75Ti3O12 thin films prepared on Si (100) by metalorganic decomposition method[J]. APPLIED PHYSICS LETTERS, 2001, 78 (12) : 1733 - 1735Hou, Y论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R ChinaXu, XH论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R ChinaWang, H论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R ChinaWang, M论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R ChinaShang, SX论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
- [4] SWITCHING, FATIGUE, AND RETENTION IN FERROELECTRIC BI4TI3O12 THIN-FILMS[J]. APPLIED PHYSICS LETTERS, 1993, 62 (16) : 1928 - 1930JOSHI, PC论文数: 0 引用数: 0 h-index: 0机构: UNIV DELHI,DEPT PHYS & ASTROPHYS,DELHI 110007,INDIAKRUPANIDHI, SB论文数: 0 引用数: 0 h-index: 0机构: UNIV DELHI,DEPT PHYS & ASTROPHYS,DELHI 110007,INDIA
- [5] Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) : 2349 - 2357Joshi, PC论文数: 0 引用数: 0 h-index: 0机构: Dept. of Mat. Sci. and Engineering, Virginia Polytech. Inst. State Univ., BlacksburgDesu, SB论文数: 0 引用数: 0 h-index: 0机构: Dept. of Mat. Sci. and Engineering, Virginia Polytech. Inst. State Univ., Blacksburg
- [6] Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition[J]. APPLIED PHYSICS LETTERS, 2002, 80 (15) : 2746 - 2748Kojima, T论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, JapanSakai, T论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, JapanWatanabe, T论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, JapanFunakubo, H论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, JapanSaito, K论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, JapanOsada, M论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
- [7] Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) : 1707 - 1712Kojima, T论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, JapanWatanabe, T论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, JapanFunakubo, H论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, JapanSaito, K论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, JapanOsada, M论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, JapanKakihana, M论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
- [8] ELECTRICAL CHARACTERISTICS OF EXCIMER LASER ABLATED BISMUTH TITANATE FILMS ON SILICON[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) : 3617 - 3621MAFFEI, N论文数: 0 引用数: 0 h-index: 0机构: PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIV PK,PA 16802 PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIV PK,PA 16802KRUPANIDHI, SB论文数: 0 引用数: 0 h-index: 0机构: PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIV PK,PA 16802 PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIV PK,PA 16802
- [9] Electromechanical properties of Nd-doped Bi4Ti3O12 films:: A candidate for lead-free thin-film piezoelectrics[J]. APPLIED PHYSICS LETTERS, 2003, 82 (11) : 1760 - 1762论文数: 引用数: h-index:机构:Iizawa, N论文数: 0 引用数: 0 h-index: 0机构: Shonan Inst Technol, Dept Mat Sci & Engn, Kanagawa 2518511, JapanTogawa, D论文数: 0 引用数: 0 h-index: 0机构: Shonan Inst Technol, Dept Mat Sci & Engn, Kanagawa 2518511, JapanHayashi, T论文数: 0 引用数: 0 h-index: 0机构: Shonan Inst Technol, Dept Mat Sci & Engn, Kanagawa 2518511, JapanSakamoto, W论文数: 0 引用数: 0 h-index: 0机构: Shonan Inst Technol, Dept Mat Sci & Engn, Kanagawa 2518511, JapanYamada, M论文数: 0 引用数: 0 h-index: 0机构: Shonan Inst Technol, Dept Mat Sci & Engn, Kanagawa 2518511, JapanHirano, S论文数: 0 引用数: 0 h-index: 0机构: Shonan Inst Technol, Dept Mat Sci & Engn, Kanagawa 2518511, Japan
- [10] Large ferroelectric response in Bi4-xNdxTi3O12 films prepared by sol-gel process[J]. APPLIED PHYSICS LETTERS, 2002, 81 (14) : 2611 - 2613Melgarejo, RE论文数: 0 引用数: 0 h-index: 0机构: Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USATomar, MS论文数: 0 引用数: 0 h-index: 0机构: Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USA Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USABhaskar, S论文数: 0 引用数: 0 h-index: 0机构: Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USADobal, PS论文数: 0 引用数: 0 h-index: 0机构: Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USAKatiyar, RS论文数: 0 引用数: 0 h-index: 0机构: Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USA