The defect luminescences of {100} sector in nitrogen-doped diamond

被引:2
|
作者
Wang Kai-Yue [1 ]
Zhu Yu-Mei [2 ]
Li Zhi-Hong [2 ]
Tian Yu-Ming [1 ]
Chai Yue-Sheng [1 ]
Zhao Zhi-Gang [1 ]
Liu Kai [1 ]
机构
[1] Taiyuan Univ Sci & Technol, Sch Mat Sci & Engn, Taiyuan 030014, Peoples R China
[2] Tianjin Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Adv Ceram & Machining Technol, Tianjin 300072, Peoples R China
关键词
diamond; defect; luminescence; PHOTOLUMINESCENCE; ABSORPTION; CENTERS; NM;
D O I
10.7498/aps.62.097803
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Nitrogen is one of the most commonly-observed impurities in diamond, and affects the luminescence of these defects greatly. The complexes could be obtained from the nitrogen atom trapping the native defects such as self-interstitials, vacancies. In this study, a high-pressure and high-temperature synthesized nitrogen-doped diamond was characterized by cathode luminescence (CL) image, and the results showed that the blue region of this sample is the {100} growth sector. The {100} sector was then electron-irradiated in transmission electron microscope (TEM) and subsequently annealed at high temperatures so as to introduce the native defects to further form the nitrogen-containing complexes. All the optical properties of these defects in diamond were investigated by the low temperature photoluminescence (PL) spectra. The PL of {100} sector dominated the strong luminescence of nitrogen-vacancy (NV) complexes together with a weak 503 nm signal.
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页数:5
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