Zero-bias anomaly in a two-dimensional granular insulator

被引：2

作者：

Ossi, N. ^{[1
]}

Bitton, L. ^{[2
]}

Gutman, D. B. ^{[1
]}

Frydman, A. ^{[1
]}

机构：

[1] Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel

[2] Weizmann Inst Sci, Fac Chem, IL-76100 Rehovot, Israel

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 11期

关键词：

COULOMB GAP; TUNNEL-JUNCTIONS; 2; DIMENSIONS; TRANSITION; SYSTEMS; FILM;

D O I：

10.1103/PhysRevB.87.115137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We compare tunneling density of states (TDOS) into two ultrathin Ag films, one uniform and one granular, for different degrees of disorder. The uniform film shows a crossover from Altshuler-Aronov (AA) zero bias anomaly to Efros Shklovskii (ES) like Coulomb gap as the disorder is increased. The granular film, on the other hand, exhibits AA behavior even deeply in the insulating regime. We analyze the data and find that granularity introduces a new regime for the TDOS. While the conductivity is dominated by hopping between clusters of grains and is thus insulating, the TDOS probes the properties of an individual cluster which is "metallic." DOI: 10.1103/PhysRevB.87.115137

引用

页数：5