Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

被引：132
作者：
Ramasamy, Karthik [1 ]
Kuznetsov, Vladimir L. [2 ]
Gopal, Kandasamy [1 ]
Malik, Mohammad A. [1 ]
Raftery, James [1 ]
Edwards, Peter P. [2 ]
O'Brien, Paul [1 ]
机构：
[1] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England
[2] Univ Oxford, Inorgan Chem Lab, Dept Chem, Oxford OX1 3QR, England
来源：
CHEMISTRY OF MATERIALS | 2013年 / 25卷 / 03期
基金：
英国工程与自然科学研究理事会;
关键词：
diorganotin dithiocarbamate; single source precursors; tin sulfide; thin films; aerosol-assisted chemical vapor deposition; THERMAL-DECOMPOSITION; SNS FILMS; TEMPERATURE; COMPLEXES; PRESSURE; GROWTH; ZINC; ELECTRODEPOSITION; CHEMISTRY; CRYSTALS;
D O I：
10.1021/cm301660n
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A series of diorganotin complexes of dithiocarbamates [Sn(C4H9)(2)(S2CN(RR')(2))(2)] (R, R' = ethyl (1); R = methyl, R' = butyl (2); R, R' = butyl (3); R = methyl, R' = hexyl (4); and [Sn(C6H5)(2)(S2CN(RR')(2))(2)] (R, R' = ethyl (5); R = methyl, R' = butyl (6); R, R' = butyl (7); R = methyl, R' = hexyl (8) were synthesized. Single-crystal X-ray structures of 2, 3, and 8 were determined. Thermogravimetric analysis (TGA) showed single-step decomposition for the complexes 1, 3, and 5-8, and double-step decomposition for the complexes 2 and 4 between 195 degrees C and 325 degrees C. Complexes 1-4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 degrees C to 530 degrees C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV-vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and also electrical resistivity measurements.
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页码：266 / 276
页数：11
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