Intrinsic terahertz photoluminescence from semiconductors

被引：8
作者：
Andrianov, A. V. [1 ]
Zakhar'in, A. O. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
来源：
APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 04期
关键词：
RECOMBINATION RADIATION; SILICON; ELECTROLUMINESCENCE; GERMANIUM; EMISSION; EXCITONS; SPECTROSCOPY; TRANSITIONS; ABSORPTION; BINDING;
D O I：
10.1063/1.5012836
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the experimental observation of intrinsic photoluminescence from semiconductors in the terahertz spectral range. The intrinsic terahertz photoluminescence is caused by intraexciton radiative transitions excited during the process of the binding of nonequilibrium electrons and holes into free excitons. The experiments were carried out on high-purity Si crystals at helium temperatures and under interband photoexcitation intensities not exceeding 1 W/cm(2). Published by AIP Publishing.
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页数：3
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