In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

被引：13

作者：

Kim, Tae-Youb ^{[1
]}

Huh, Chul ^{[1
]}

Park, Nae-Man ^{[1
]}

Choi, Cheol-Jong ^{[2
]}

Suemitsu, Maki ^{[3
]}

机构：

[1] Elect & Telecommun Res Inst, Convergence Components & Mat Lab, Taejon 305700, South Korea

[2] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 561756, South Korea

[3] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

来源：

NANOSCALE RESEARCH LETTERS | 2012年 / 7卷

关键词：

Silicon nanocrystals; in situ-formed Si-NCs; Silicon carbide-based films; Hexagonal silicon phase structure; QUANTUM DOTS; ELECTRONIC-PROPERTIES; BLUE-LIGHT; STATES; PHOTOLUMINESCENCE; LUMINESCENCE; EMISSION;

D O I：

10.1186/1556-276X-7-634

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.

引用

页数：5

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