Donor and Acceptor Dynamics of Phosphorous Doped ZnO Nanorods with Stable p-Type Conduction: Photoluminescence and Junction Characteristics

被引：3

作者：

Ahn, Cheol Hyoun ^{[1
]}

Mohanta, Sanjay Kumar ^{[1
]}

Cho, Hyung Koun ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

p-Doped ZnO; Nanorods; p-Type; LIGHT-EMITTING-DIODES; THIN-FILMS; NANOWIRE ARRAYS; DEPOSITION;

D O I：

10.1166/jnn.2012.6224

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We employed temperature-dependent photoluminescence (PL) to explain the donor and acceptor dynamics in phosphorus doped stable p-type P:ZnO nanorods. The room temperature PL revealed good crystalline and optical quality of P:ZnO nanorods. The 10 K PL spectrum exhibited a dominant acceptor bound exciton (A(0)X) or donor bound exciton ((DX)-X-0) emission corresponding to p- and n-type P:ZnO nanorods, respectively. The donor acceptor-pair (DAP) transitions exhibited different thermal dissociation energies for the p- and n-type P:ZnO nanorods, suggesting their different quenching channels. The quenching of the DAP transitions of the p-type ZnO:P nanorods was associated with the thermal dissociation of the DAP into free excitons, while the DAP transition of the n-type ZnO:P nanorods was quenched through the thermal dissociation of the shallow donor into free electrons. The rectifying behavior of a p-n homojunction diode formed by the p-type P:ZnO nanorods on n-type ZnO film confirmed the p-type conduction of the P:ZnO nanorods.

引用

页码：5571 / 5576

页数：6

共 24 条

[1] Enhanced exciton-phonon interactions in photoluminescence of ZnO nanopencils [J].

Ahn, Cheol Hyoun ;

Mohanta, Sanjay Kumar ;

Lee, Nae Eung ;

Cho, Hyung Koun .

APPLIED PHYSICS LETTERS, 2009, 94 (26)

[2] Mechanisms for high internal quantum efficiency of ZnO nanorods [J].

Al-Suleiman, M. A. M. ;

Bakin, A. ;

Waag, A. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)

[3] Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates [J].

Alivov, YI ;

Kalinina, EV ;

Cherenkov, AE ;

Look, DC ;

Ataev, BM ;

Omaev, AK ;

Chukichev, MV ;

Bagnall, DM .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4719-4721

[4] Violet luminescence in phosphorus-doped ZnO epitaxial films [J].

Allenic, A. ;

Pan, X. Q. ;

Che, Y. ;

Hu, Z. D. ;

Liu, B. .

APPLIED PHYSICS LETTERS, 2008, 92 (02)

[5] Amphoteric phosphorus doping for stable p-type ZnO [J].

Allenic, Arnold ;

Guo, Wei ;

Chen, Yanbin ;

Katz, Michael Brandon ;

Zhao, Guangyuan ;

Che, Yong ;

Hu, Zhendong ;

Liu, Bing ;

Zhang, Sheng Bai ;

Pan, Xiaoqing .

ADVANCED MATERIALS, 2007, 19 (20) :3333-+

[6] Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition [J].

Cao, B. Q. ;

Lorenz, M. ;

Rahm, A. ;

von Wenckstern, H. ;

Czekalla, C. ;

Lenzner, J. ;

Benndorf, G. ;

Grundmann, M. .

NANOTECHNOLOGY, 2007, 18 (45)

[7] Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy -: art. no. 213103 [J].

Du, GT ;

Ma, Y ;

Zhang, YT ;

Yang, TP .

APPLIED PHYSICS LETTERS, 2005, 87 (21) :1-3

[8] Visual-infrared electroluminescence emission from ZnO/GaAs heterojunctions grown by metal-organic chemical vapor deposition [J].

Du, Guotong ;

Cui, Yongguo ;

Xia, Xiaochuan ;

Li, Xiangping ;

Zhu, Huichao ;

Zhang, Baolin ;

Zhang, Yuantao ;

Ma, Yan .

APPLIED PHYSICS LETTERS, 2007, 90 (24)

[9] Shallow donor formation in phosphorus-doped ZnO thin films [J].

Heo, YW ;

Ip, K ;

Park, SJ ;

Pearton, SJ ;

Norton, DP .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 78 (01) :53-57

[10] Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering -: art. no. 151917 [J].

Hwang, DK ;

Kim, HS ;

Lim, JH ;

Oh, JY ;

Yang, JH ;

Park, SJ ;

Kim, KK ;

Look, DC ;

Park, YS .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

← 1 2 3 →