Thermoelectric properties of La-doped BaSi2

被引：10

作者：

Hashimoto, Kohsuke ^{[1
]}

Kurosaki, Ken ^{[1
]}

Muta, Hiroaki ^{[1
]}

Yamanaka, Shinsuke ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Sustainable Energy & Environm Engn, Suita, Osaka 5650871, Japan

来源：

MATERIALS TRANSACTIONS | 2008年 / 49卷 / 08期

关键词：

BaSi2; thermoelectrics; thermal conductivity; electrical resistivity; Seebeck coefficient;

D O I：

10.2320/matertrans.E-MRA2008818

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The authors tried to enhance the thermoelectric figure of merit of BaSi2 by doping La. Polycrystalline samples of La-doped BaSi2: Ba1-xLaxSi2 (0 <= x <= 0.08) were prepared and characterized. The effect of La-doping was investigated by measuring the thermoelectric properties above room temperature to 973 K. La could dissolve in BaSi2 up to around x = 0.03, while LaSi2 appeared as the second phase in the higher x range. Both the electrical resistivity and thermal conductivity of the La-doped samples were lower than those of the non-doped Bask. Ba1-xLaxSi2 (x = 0.02) indicated the largest power factor and dimensionless figure of merit (ZT). The ZT value was 0.07 at 970 K, which was approximately 7 times larger than that of non-doped BaSi2.

引用

页码：1737 / 1740

页数：4

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