Thermoelectric properties of La-doped BaSi2

被引：9
|
作者：
Hashimoto, Kohsuke [1 ]
Kurosaki, Ken [1 ]
Muta, Hiroaki [1 ]
Yamanaka, Shinsuke [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Div Sustainable Energy & Environm Engn, Suita, Osaka 5650871, Japan
来源：
MATERIALS TRANSACTIONS | 2008年 / 49卷 / 08期
关键词：
BaSi2; thermoelectrics; thermal conductivity; electrical resistivity; Seebeck coefficient;
D O I：
10.2320/matertrans.E-MRA2008818
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The authors tried to enhance the thermoelectric figure of merit of BaSi2 by doping La. Polycrystalline samples of La-doped BaSi2: Ba1-xLaxSi2 (0 <= x <= 0.08) were prepared and characterized. The effect of La-doping was investigated by measuring the thermoelectric properties above room temperature to 973 K. La could dissolve in BaSi2 up to around x = 0.03, while LaSi2 appeared as the second phase in the higher x range. Both the electrical resistivity and thermal conductivity of the La-doped samples were lower than those of the non-doped Bask. Ba1-xLaxSi2 (x = 0.02) indicated the largest power factor and dimensionless figure of merit (ZT). The ZT value was 0.07 at 970 K, which was approximately 7 times larger than that of non-doped BaSi2.
引用
收藏
页码：1737 / 1740
页数：4
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