Recent trends and progress in deep-UV lithography

被引：6

作者：

Ronse, K ^{[1
]}

Goethals, AM ^{[1
]}

Vandenberghe, G ^{[1
]}

Maenhoudt, M ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING | 1999年 / 3741卷

关键词：

KrF; ArF; optical lithography; aberrations; resolution enhancement; optical extensions; mask error factor; phase shifting masks; optical proximity correction;

D O I：

10.1117/12.346897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the current status and recent progress in the field of deep UV lithography is reviewed. The introduction of resolution enhancement techniques and high NA 248nm lenses is discussed, with emphasis on their impact on intrafield linewidth control. It is expected that 248nm will be used for volume manufacturing of the 0.15 mu m gate length devices and perhaps even pushed to the 0.13 mu m generation. The current status of 193nm lithography is reviewed, which is expected to be inserted at the 0.13 mu m technology node. Based on the current situation at 248nm, the extendibility of 193nm lithography to the 100nm node is discussed.

引用

页码：34 / 39

页数：6

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