Comparative study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks

被引:33
作者
Oh, D. C. [1 ,3 ]
Kato, T. [1 ]
Goto, H. [1 ]
Park, S. H. [1 ]
Hanada, T. [1 ]
Yao, T. [1 ]
Kim, J. J. [2 ]
机构
[1] Tohoku Univ, Interdisciplinary Res Ctr, Aobak Ku, Sendai, Miyagi 9808578, Japan
[2] Samsung Elect Co Ltd, Photomask Team, Hwasung 445701, South Korea
[3] Hoseo Univ, Dept Def Sci & Technol, Asan 336795, Asan, South Korea
关键词
II-VI semiconductors; phonon-exciton interactions; photoluminescence; wide band gap semiconductors; zinc; zinc compounds;
D O I
10.1063/1.3033224
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors have an extensive study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks. In the photoluminescence (PL) spectra at 10 K, Zn-polar and O-polar faces show a common emission feature: neutral donor-bound excitons and their longitudinal-optical (LO) phonon replicas are strong and free excitons are very weak. However, in the PL spectra at room temperature (RT), Zn-polar and O-polar faces show extremely different emission characteristics: the emission intensity of Zn-polar face is 30 times larger than that of O-polar face and the band edge of Zn-polar face is 33 meV redshifted from that of O-polar face. The temperature dependence of photoluminescence indicates that the PL spectra at RT are closely associated with free excitons and their phonon-assisted annihilation processes. As a result, it is found that the RT PL spectra of Zn-polar face are dominated by the first-order LO phonon replica of A free excitons, while that of O-polar face is determined by A free excitons. This is ascribed to the difference in exciton-phonon coupling strengths that Zn-polar phase has larger coupling strength than O-polar face.
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页数:3
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