Semi-insulating LEC GaAs substrates with an improved macroscopic and mesoscopic homogeneity

被引：6

作者：

Jurisch, M ^{[1
]}

Flade, T ^{[1
]}

Hoffmann, B ^{[1
]}

Kohler, A ^{[1
]}

Korb, J ^{[1
]}

Kretzer, U ^{[1
]}

Reinhold, T ^{[1
]}

Weinert, B ^{[1
]}

机构：

[1] GTT TECHNOL,FREIBERG,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

关键词：

gallium arsenide; macroscopic and mesoscopic homogeneity; crystal inhomogeneity;

D O I：

10.1016/S0921-5107(96)01916-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A semi-quantitative understanding of the thermochemistry of boron oxide gettering ability and the influence of gas phase composition on the GaAs-melt in synthesis and growth allows LEG-growth of carbon controlled semi-insulating GaAs-crystals on a production scale. By optimization of thermal growth conditions and of a two-step post-growth ingot annealing procedure the scatter of electrical parameters among crystals has been significantly reduced and the homogeneity of individual crystals on a macroscopic and mesoscopic scale has been improved. (C) 1997 Published by Elsevier Science S.A.

引用

页码：198 / 202

页数：5

共 15 条

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DOERING PJ, 1990, SEMI-INSULATING III-V MATERIALS, TORONTO 1990, P173

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