High-quality quantum point contact in two-dimensional GaAs (311)A hole system

被引：5

作者：

Shabani, J. ^{[1
]}

Petta, J. R. ^{[2
]}

Shayegan, M. ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Princeton Univ, Dept Phys, Princeton, NJ 08854 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 21期

关键词：

ballistic transport; etching; Fermi level; gallium arsenide; hole density; III-V semiconductors; magnetoresistance; quantum point contacts; two-dimensional hole gas;

D O I：

10.1063/1.3036011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality GaAs (311)A two-dimensional hole system using shallow etching and top gating. The QPC conductance exhibits up to 11 quantized plateaus. The ballistic one-dimensional subbands are tuned by changing the lateral confinement and the Fermi energy of the holes in the QPC. We demonstrate that the positions of the plateaus (in gate voltage), the source-drain data, and the negative magnetoresistance data can be understood in a simple model that takes into account the variation, with gate bias, of the hole density and the width of the QPC conducting channel.

引用

页数：3

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