Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO2

被引：116

作者：

Hicks, Clifford W. ^{[1
]}

Gibbs, Alexandra S. ^{[1
,2
,3
]}

Mackenzie, Andrew P. ^{[1
]}

Takatsu, Hiroshi ^{[4
]}

Maeno, Yoshiteru ^{[5
]}

Yelland, Edward A. ^{[1
,6
]}

机构：

[1] Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews KY16 9SS, Fife, Scotland

[2] Univ St Andrews, Sch Chem, St Andrews KY16 9ST, Fife, Scotland

[3] Univ St Andrews, EaStCHEM, St Andrews KY16 9ST, Fife, Scotland

[4] Tokyo Metropolitan Univ, Dept Phys, Tokyo 1920397, Japan

[5] Kyoto Univ, Grad Sch Sci, Dept Phys, Kyoto 6068502, Japan

[6] Univ Edinburgh, Sch Phys & Astron, SUPA, Edinburgh EH9 3JZ, Midlothian, Scotland

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

NOBLE METAL OXIDES; ELECTRICAL-TRANSPORT; CRYSTAL-CHEMISTRY; CONDUCTIVITY; PTCOO2; REO3;

D O I：

10.1103/PhysRevLett.109.116401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 mu Omega cm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T-5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is similar to 20 mu m, approximately 10(5) lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.

引用

页数：5

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