The study of preparation and photoelectrical properties of chemical bath deposited Zn, Sb and Ni-doped CuInS2 films for hydrogen production

被引:24
作者
Garskaite, Edita [1 ]
Pan, Guan-Ting [2 ]
Yang, Thomas C. -K. [1 ,2 ]
Huang, Sheng-Tung [1 ]
Kareiva, Aivaras [3 ]
机构
[1] Natl Taipei Univ Technol, Inst Biotechnol, Taipei, Taiwan
[2] Natl Taipei Univ Technol, Dept Chem Engn & Biotechnol, Taipei, Taiwan
[3] Vilnius State Univ, Dept Gen & Inorgan Chem, Vilnius, Lithuania
关键词
Photocatalysts; Electrochemical performance; Optical properties; CuInS2; crystalline; VISIBLE-LIGHT-RESPONSE; THIN-FILMS; OPTICAL-PROPERTIES; H-2; EVOLUTION; BAND STRUCTURE; X-RAY; TIO2; PHOTOCATALYSTS; NANOCRYSTALS; WATER;
D O I
10.1016/j.solener.2012.05.031
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Pure and Zn, Sb, Ni-doped CuInS2 films were prepared by chemical bath deposition method. Structural, morphological, optical, and photoelectrochemical properties of the as-grown films were investigated. X-ray diffraction analysis revealed that films consisted of the tetragonal CuInS2 phase. The energy band gaps and carrier densities of these samples were in the ranges of 1.48-1.54 eV and 2.38 x 10(18)-9.38 x 10(19), respectively. The maximum photocurrent density cif samples with a potential of -1.0 V vs. a Pt electrode was found to be -8.58 mA/cm(2) with the largest hydrogen production capability of 33.26 mu mol/cm(2) under illumination using a 300 W Xe lamp system. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2584 / 2591
页数:8
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