On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

被引：29
作者：
Hsu, Chi-Shiang [1 ]
Chen, Huey-Ing [2 ]
Chang, Chung-Fu [1 ]
Chen, Tai-You [1 ]
Huang, Chien-Chang [1 ]
Chou, Po-Cheng [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2012年 / 165卷 / 01期
关键词：
Pd/AlGaN/GaN; HFET; Hydrogen sensor; Transient response; LIGHT-EMITTING DIODE; SENSORS; PD/GAN;
D O I：
10.1016/j.snb.2012.01.059
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The interesting temperature-dependent hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) are studied and demonstrated. Remarkable hydrogen sensing performance is found at a very low concentration of hydrogen gases (<= 1 ppm H-2/air). In addition, a good transistor switching behavior with the high drain current on/off value of 93,680 is obtained for 1% ppm H-2/air gas at 523 K. The fast transient response as comparable with a Schottky-type hydrogen sensor is also observed. Based on these advantages, the studied device shows a promise for high-performance, high-temperature electronics, and micro electro-mechanical system (MEMS) applications. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：19 / 23
页数：5
相关论文
共 32 条
[1]   Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment [J].
Cai, Yong ;
Cheng, Zhiqun ;
Tang, Wilson Chak Wah ;
Lau, Kei May ;
Chen, Kevin J. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2223-2230
[2]   Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode [J].
Chang, Chung-Fu ;
Tsai, Tsung-Han ;
Chen, Huey-Ing ;
Lin, Kun-Wei ;
Chen, Tzu-Pin ;
Chen, Li-Yang ;
Liu, Yi-Chun ;
Liu, Wen-Chau .
ELECTROCHEMISTRY COMMUNICATIONS, 2009, 11 (01) :65-67
[3]   A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating [J].
Chen, HI ;
Chou, YI ;
Chu, CY .
SENSORS AND ACTUATORS B-CHEMICAL, 2002, 85 (1-2) :10-18
[4]   Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT) [J].
Cheng, Shiou-Ying .
MICROELECTRONICS RELIABILITY, 2007, 47 (08) :1208-1212
[5]   Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance [J].
Chiu, Shao-Yen ;
Huang, Hsuan-Wei ;
Huang, Tze-Hsuan ;
Liang, Kun-Chieh ;
Liu, Kang-Ping ;
Tsai, Jung-Hui ;
Lour, Wen-Shiung .
SENSORS AND ACTUATORS B-CHEMICAL, 2009, 138 (02) :422-427
[6]   Comprehensive investigation on planar type of Pd-GaN hydrogen sensors [J].
Chiu, Shao-Yen ;
Huang, Hsuan-Wei ;
Huang, Tze-Hsuan ;
Liang, Kun-Chieh ;
Liu, Kang-Ping ;
Tsai, Jung-Hui ;
Lour, Wen-Shiung .
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2009, 34 (13) :5604-5615
[7]   High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2 [J].
Chiu, Shao-Yen ;
Huang, Hsuan-Wei ;
Liang, Kun-Chieh ;
Huang, Tze-Hsuan ;
Liu, Kang-Ping ;
Tsai, Jung-Hui ;
Lour, Wen-Shiung .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (04)
[8]   Wireless Detection System for Glucose and pH Sensing in Exhaled Breath Condensate Using AlGaN/GaN High Electron Mobility Transistors [J].
Chu, Byung Hwan ;
Kang, B. S. ;
Chang, C. Y. ;
Ren, Fan ;
Goh, Aik ;
Sciullo, Andrew ;
Wu, Wenhsing ;
Lin, Jenshan ;
Gila, B. P. ;
Pearton, Steve J. ;
Johnson, J. W. ;
Piner, E. L. ;
Linthicum, Kevin J. .
IEEE SENSORS JOURNAL, 2010, 10 (01) :64-70
[9]   Hydrogen economy for a sustainable development: state-of-the-art and technological perspectives [J].
Conte, M ;
Iacobazzi, A ;
Ronchetti, M ;
Vellone, R .
JOURNAL OF POWER SOURCES, 2001, 100 (1-2) :171-187
[10]   InAlAs/InGaAs MOS-MHEMTs by Using Ozone Water Oxidation Treatment [J].
Hsu, Wei-Chou ;
Lee, Ching-Sung ;
Ho, Chiu-Sheng ;
Lai, Ying-Nan ;
Huang, Jun-Chin ;
Chou, Bo-Yi ;
Kao, An-Yung ;
Yeh, Hsuan-Hsien ;
Wu, Chuan-Luan .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (07) :H234-H236
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