Optical bistability analysis inside a two-bus ring resonator.

被引：0

作者：

Priem, G ^{[1
]}

Dumon, P ^{[1
]}

Bogaerts, W ^{[1
]}

Van Thourhout, D ^{[1
]}

Morthier, G ^{[1
]}

Baets, R ^{[1
]}

机构：

[1] Univ Ghent, IMEC, Dept Informat Technol, Photon Res Grp, Ghent, Belgium

来源：

2005 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS (LEOS) | 2005年

关键词：

D O I：

10.1109/LEOS.2005.1547921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate experimentally optical bistability inside a two-bus ring resonator fabricated in Silicon-on-Insulator with a power of only 680 mu W. We have analysed the different contributions leading to this bistable behaviour and show that the dominant nonlinear effects are free carrier based.

引用

页码：147 / 148

页数：2

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