The structural properties of carbon nanotubes grown on porous silicon-based materials by thermal chemical vapor deposition method.

被引：1

作者：

Husairi, F. S. ^{[1
]}

Zobir, S. A. M. ^{[1
]}

Rusop, M. ^{[1
]}

Abdullah, S. ^{[1
]}

机构：

[1] Univ Teknol MARA UiTM, Inst Sci, NANO SciTech Ctr NST, Shah Alam 40450, Selangor, Malaysia

来源：

GREEN TECHNOLOGIES FOR SUSTAINABLE & INNOVATION IN MATERIALS | 2013年 / 686卷

关键词：

Porous silicon nanostructures; carbon nanotubes; FESEM; micro-Raman spectroscopy;

D O I：

10.4028/www.scientific.net/AMR.686.28

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, carbon nanotubes on porous silicon substrate were developed in order to get high quality nanotubes for various kind of application. CNTs were deposited on porous silicon nanostructures (PSiN) at 750 degrees C on porous silicon by using double-furnace thermal chemical vapor deposition technique. Align carbon nanotubes with diameters of 15 to 30 am were successfully synthesized on a porous silicon substrate. In this system, carbon nanotubes were grown directly on the p-type porous silicon surface at 750 degrees C for a total time of 30 minutes. The samples were characterized using field emission scanning electron microscopy and micro-Raman spectroscopy. Align carbon nanotubes (ACNTs) bundle with uniform diameter (similar to 20 nm) were found grown on porous silicon at certain area. Based on micro-Raman spectroscopy result, the peak of silicon at similar to 520 nm and peak of carbon nanotube (around 1 300 to 1 600 nm) was detected.

引用

页码：28 / 32

页数：5

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