Photogalvanic effects in topological insulators

被引:23
作者
Artemenko, S. N. [1 ]
Kaladzhyan, V. O.
机构
[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Moscow 125009, Russia
基金
俄罗斯基础研究基金会;
关键词
JETP Letter; Edge State; HgTe; Topological Insulator; Electric Dipole Transition;
D O I
10.1134/S0021364013020021
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We discuss optical absorption in topological insulators and study possible photoelectric effects theoretically. We found that absorption of circularly polarized electromagnetic waves in two-dimensional topological insulators results in electric current in the conducting 1D edge channels, the direction of the current being determined by the light polarization. We suggest two ways of inducing such a current: due to magnetic dipole electron transitions stimulated by irradiation of frequency below the bulk energy gap, and due to electric dipole transitions in the bulk at frequencies larger than the energy gap with subsequent capture of the photogenerated carriers on conducting edge states.
引用
收藏
页码:82 / 86
页数:5
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