Mobility improvement of P3HT thin film by high-voltage electrostatic field-assisted crystallization

被引：11

作者：

Lee, Soon-Won ^{[1
]}

Kim, Chul-Hyun ^{[1
]}

Lee, Sang-Geul ^{[2
]}

Jeong, Jun-Ho ^{[1
]}

Choi, Jun-Hyuk ^{[1
]}

Lee, Eung-Sug ^{[1
]}

机构：

[1] Korea Inst Machinery & Mat, Dept Nanomech Syst, Taejon, South Korea

[2] Daegu Ctr, Korea Basic Sci Inst, Taegu 702701, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2013年 / 9卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

hole mobility; P3HT; electric field-induced crystallization; molecular chain orientation; EFFECT TRANSISTORS; MOLECULAR-WEIGHT; SOLAR-CELLS; REGIOREGULAR POLYTHIOPHENE; POLY(3-HEXYLTHIOPHENE); NANOSTRUCTURES; ENHANCEMENT; MORPHOLOGY; STATE;

D O I：

10.1007/s13391-013-0033-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-temperature annealing, assisted by the in-plane application of a high-voltage electric field, was used to form thin films of poly(3-hexylthiophene) (P3HT), boasting increased crystallite size and enhanced charge mobility. In-plane crystallite growth and surface morphology were characterized by atomic force microscopy. X-ray diffraction analyses showed that the application of an electric field decreased film thickness and increased the dimensions of the crystalline domains by 25.6% during subsequent high-temperature annealing. Crystalline domains were 13.4% larger, and exhibited 70% higher mobility, than those obtained with thermal annealing in the absence of an electric field.

引用

页码：471 / 476

页数：6

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