Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction

被引：116
作者：
Guo, Zhen [1 ,2 ]
Zhao, Dongxu [1 ]
Liu, Yichun [3 ]
Shen, Dezhen [1 ]
Zhang, Jiying [1 ]
Li, Binghui [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
[3] NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 16期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.3003877
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Closely packed ZnO nanowire array was fabricated on a n-type Si (100) substrate by a magnetron cosputtering method. The ZnO nanowire/n-Si heterojunction showed good diode characteristics with rectification ratio of above 1.6x10(2) at 4 V in the dark. Experiments demonstrated that the diode could be used to detect either visible or ultraviolet light by easily controlling the polarity of the voltage applied on the heterojunction. The spectral response of the device will be discussed in terms of the band diagrams of the heterojunction and the carrier diffusion process. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3003877].
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页数：3
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共 20 条
  • [11] ZnO nanowires with high aspect ratios grown by metalorganic chemical vapor deposition using gold nanoparticles
    Kim, SW
    Fujita, S
    Fujita, S
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (15) : 1 - 3
  • [12] Self-assembly of aligned ZnO nanoscrews: Growth, configuration, and field emission
    Liao, L
    Li, JC
    Liu, DH
    Liu, C
    Wang, DF
    Song, WZ
    Fu, Q
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (08) : 1 - 3
  • [13] Electrical and optical properties of defects and impurities in ZnO
    Look, DC
    Coskun, C
    Claflin, B
    Farlow, GC
    [J]. PHYSICA B-CONDENSED MATTER, 2003, 340 : 32 - 38
  • [14] p-type behavior from Sb-doped ZnO heterojunction photodiodes
    Mandalapu, LJ
    Xiu, FX
    Yang, Z
    Zhao, DT
    Liu, JL
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (11)
  • [15] Enhanced field emission properties from well-aligned zinc oxide nanoneedles grown on the Au/Ti/n-Si substrate
    Park, Chan Jun
    Choi, Duck-Kyun
    Yoo, Jinkyoung
    Yi, Gyu-Chul
    Lee, Cheol Jin
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (08)
  • [16] ZnO nanowire UV photodetectors with high internal gain
    Soci, C.
    Zhang, A.
    Xiang, B.
    Dayeh, S. A.
    Aplin, D. P. R.
    Park, J.
    Bao, X. Y.
    Lo, Y. H.
    Wang, D.
    [J]. NANO LETTERS, 2007, 7 (04) : 1003 - 1009
  • [17] Sze S.M., 2013, SEMICONDUCTOR DEVICE
  • [18] Ultraviolet and visible electroluminescence from n-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes
    Tan, S. T.
    Sun, X. W.
    Zhao, J. L.
    Iwan, S.
    Cen, Z. H.
    Chen, T. P.
    Ye, J. D.
    Lo, G. Q.
    Kwong, D. L.
    Teo, K. L.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (01)
  • [19] Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives -: art. no. 024108
    Wang, LS
    Zhang, XZ
    Zhao, SQ
    Zhou, GY
    Zhou, YL
    Qi, JJ
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (02) : 024108 - 1
  • [20] Femtosecond laser assisted growth of ZnO nanowires
    Zhang, YF
    Russo, RE
    Mao, SS
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (13) : 1 - 3
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