Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction

被引：116

作者：

Guo, Zhen ^{[1
,2
]}

Zhao, Dongxu ^{[1
]}

Liu, Yichun ^{[3
]}

Shen, Dezhen ^{[1
]}

Zhang, Jiying ^{[1
]}

Li, Binghui ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

[3] NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 16期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.3003877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Closely packed ZnO nanowire array was fabricated on a n-type Si (100) substrate by a magnetron cosputtering method. The ZnO nanowire/n-Si heterojunction showed good diode characteristics with rectification ratio of above 1.6x10(2) at 4 V in the dark. Experiments demonstrated that the diode could be used to detect either visible or ultraviolet light by easily controlling the polarity of the voltage applied on the heterojunction. The spectral response of the device will be discussed in terms of the band diagrams of the heterojunction and the carrier diffusion process. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3003877].

引用

页数：3

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