Carrier tuned rectifying-like behavior in superconducting La1.8Sr0.2CuO4/La1.9Sr0.1CuO4 bilayers

被引：4

作者：

Zhang, Y. ^{[1
]}

Li, P. G. ^{[1
]}

Wang, G. F. ^{[1
]}

Xing, Y. ^{[1
]}

Wu, D. S. ^{[1
]}

Shen, J. Q. ^{[1
]}

Lei, M. ^{[2
,3
]}

Tang, W. H. ^{[2
,3
]}

机构：

[1] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Peoples R China

[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[3] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 11期

基金：

中国国家自然科学基金;

关键词：

FIELD-INDUCED SUPERCONDUCTIVITY; ELECTRONIC-STRUCTURE; INTERFACE; INSULATOR; SRTIO3; LA2-XSRXCUO4; TEMPERATURE; TRANSITION;

D O I：

10.1063/1.4796179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A bilayer structure of superconducting overdoped La1.8Sr0.2CuO4 and underdoped La1.9Sr0.1CuO4 films was fabricated using pulsed laser deposition and wet chemical etching techniques. The difference in carrier concentrations in the two layers causes rectifying-like behavior when the films are cooled below a critical temperature T-c. This behavior can be interpreted within the framework of quenched superconducting films, with carrier migration occurring between the two layers at very low positive current. These results suggest that electric field-controlled carrier migration between two layers in a bilayer structure can yield new interfacial properties, which would be of interest for device applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4796179]

引用

页数：5

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