Design of Power-Rail ESD Clamp With Dynamic Timing-Voltage Detection Against False Trigger During Fast Power-ON Events

被引:22
作者
Chen, Jie-Ting [1 ]
Ker, Ming-Dou [1 ]
机构
[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
关键词
Diode string; electrostatic discharge (ESD); ESD protection; power-rail ESD clamp circuit; PROTECTION DESIGN; LEAKAGE-CURRENT; CMOS PROCESS; CIRCUITS;
D O I
10.1109/TED.2018.2789819
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The RC-based power-rail electrostatic discharge (ESD) clamp with nMOS of large size has been widely utilized to enhance the ESD robustness of CMOS integrated circuits. However, such circuit design that only detects the rising time of ESD pulse may be accidentally triggered in some conditions, such as fast power-ON, hot-plug, and envelope tracking applications. In this paper, a new power-rail ESD clamp circuit with transient and voltage detection function has been proposed and implemented in a 0.18-mu m 1.8-V CMOS technology. The measurement results from the silicon chip have demonstrated that the new proposed power-rail ESD clamp circuit with adjustable minimum starting voltage (V-starting) can achieve good ESD robustness and avoid triggering under fast power-ON condition. In addition, the proposed circuit has a low standby leakage current of 270 nA at 125 degrees C under normal power-ON condition.
引用
收藏
页码:838 / 846
页数:9
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