Fabrication and microstructure of high coercivity FePt thin films at 400 °C -: art. no. 052503

被引：51

作者：

Zhao, ZL

Chen, JS

Ding, J

Yi, JB

Liu, BH

Wang, JP

机构：

[1] Data Storage Inst, Singapore 117608, Singapore

[2] Natl Univ Singapore, Dept Mat Sci, Singapore 119620, Singapore

[3] Natl Univ Singapore, Nanosci & Nanotechnol Initiat, Singapore 117576, Singapore

[4] Natl Univ Singapore, Dept Mat Sci, Singapore 119620, Singapore

[5] Univ Minnesota, MINT, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 05期

关键词：

D O I：

10.1063/1.2168256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

L1(0) phase FePt thin films deposited on MgO (100) single-crystal substrate with good (001) texture were investigated. Epitaxial growth of the FePt (001) films was observed with a deposition temperature of 400 degrees C. With ultrathin Ag intermediate layers deposited between FePt layers, the film structures changed from an interconnection network to an isolated-island character. The perpendicular coercivity of the FePt film dramatically increased from 6.5 to 32.5 kOe. The improvement of the magnetic properties may be attributed to the formation of island structures by the additive Ag in the FePt films. (c) 2006 American Institute of Physics.

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页码：1 / 3

页数：3

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