Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface

被引：32
作者：
Akasaka, Tetsuya [1 ]
Gotoh, Hideki [1 ]
Kobayashi, Yasuyuki [1 ]
Yamamoto, Hideki [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 31期
基金：
日本学术振兴会;
关键词：
InN; step-free; quantum well; photoluminescence; LIGHT-EMITTING-DIODES; EPITAXIAL LATERAL OVERGROWTH; CHEMICAL-VAPOR-DEPOSITION; PHASE EPITAXY; GROWTH; EFFICIENCY; LAYER; POWER; BLUE;
D O I：
10.1002/adma.201200871
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
An ultrathin (one monolayer thick) InN single quantum well (SQW) formed on a step-free GaN surface shows very sharp violet PL emission. The size (16 mu m in diameter) is large enough for state-of-the-art nanotechnology to handle. Longer wavelength emissions, such as green and red, are expected by increasing the thickness of the SQW through the utilization of the quantum size effect.
引用
收藏
页码：4296 / +
页数：6
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