Recovery temperatures of defects in tungsten created by self-implantation

被引：34

作者：

Markina, E. ^{[1
]}

Mayer, M. ^{[1
]}

Manhard, A. ^{[1
]}

Schwarz-Selinger, T. ^{[1
]}

机构：

[1] Max Planck Inst Plasma Phys, D-85748 Garching, Germany

来源：

JOURNAL OF NUCLEAR MATERIALS | 2015年 / 463卷

关键词：

ION-BEAM ANALYSIS; DEUTERIUM RETENTION; NUCLEAR-REACTION; CROSS-SECTION; LARGE DEPTHS; IRRADIATION; DAMAGE; NEUTRON; METALS;

D O I：

10.1016/j.jnucmat.2014.12.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recovery of radiation defects in recrystallized tungsten was studied in the temperature range 400-1150 K. The defects were created by 20 MeV tungsten ions irradiation at room temperature to a maximum damage level of 0,9 dpa. The samples were then annealed to temperatures of 400-1150 K for 1 hour in order to anneal the created defects. After annealing the remaining defects were decorated with D by exposing them to a low-temperature ECR-plasma at 400 K to a fluence of 1 x 10(25) D/m(2). Deuterium was detected by nuclear reaction analysis and temperature programmed desorption. Annealing of defects is observed already at slightly elevated temperatures. At 820 K about 50% of the initial defects were annealed, while still about 30% of the initial defects were present after annealing at 1150 K. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：329 / 332

页数：4

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