Spin-polarized electron emitter: Mn-doped GaN nanotubes and their arrays

The influences from the doping magnetic atom, Mn, on the geometry, electronic properties, and spin-polarization characteristics are demonstrated for open armchair gallium nitrogen (GaN) nanotubes and arrays by use of the first-principles calculations. The interaction between dangling bonds of Ga (Mn) and N atoms at the open-end promotes the self-close of the tube mouth and formation of a more stable open semicone top. Primarily owing to hybridization of Mn 3d and N 2p orbitals, one Mn atom introduces several impurity energy levels into the original energy gap, and the calculated magnetic moment is 4mu(B). The electron spin polarizations in the field emission are theoretically evaluated. We suggest that armchair open GaN nanotube arrays doped with a finite number of magnetic atoms may have application potential as the electron source of spintronic devices in the future.