Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer

被引：94

作者：

Lee, Jang-Sik ^{[1
]}

Kim, Yong-Mu ^{[1
]}

Kwon, Jeong-Hwa ^{[2
,3
]}

Shin, Hyunjung ^{[1
]}

Sohn, Byeong-Hyeok ^{[2
,3
]}

Lee, Jaegab ^{[1
]}

机构：

[1] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

[2] Seoul Natl Univ, Dept Chem, Seoul 151747, South Korea

[3] Seoul Natl Univ, NANO Syst Inst, Seoul 151747, South Korea

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 02期

关键词：

DIBLOCK COPOLYMER MICELLES; HIGH-DENSITY; THIN-FILM; NANOCRYSTAL; TRANSISTORS; ELEMENT; STORAGE; DESIGN; ARRAYS; GATE;

D O I：

10.1002/adma.200800340

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Tunable memory characteristics are investigated according to the metal-nanoparticle species being used in memory devices. The memory devices are fabricated using cliblock copolymer micelles as templates to synthesize nanoparticles of cobalt, gold, and a binary mixture thereof. Programmable memory characteristics show different charging/discharging behaviors according to the storage element configurations as confirmed by nanoscale device characterization.

引用

页码：178 / +

页数：7

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