Investigation of the radiation performance of CCD sensors in a vertex detector application

被引:5
作者
Stefanov, KD [1 ]
Tsukamoto, T
Miyamoto, A
Sugimoto, Y
Tamura, N
Takahashi, S
Abe, K
Nagamine, T
Aso, T
机构
[1] Saga Univ, Dept Phys, Saga 8408502, Japan
[2] High Energy Accelerator Res Org, Tsukuba, Ibaraki 3050801, Japan
[3] Niigata Univ, Dept Phys, Niigata 9502181, Japan
[4] Tohoku Univ, Dept Phys, Sendai, Miyagi 98077, Japan
[5] Toyama Natl Coll Maritime Technol, Toyama 9330239, Japan
关键词
D O I
10.1016/S0168-9002(99)00618-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The radiation performance of a Hamamatsu S5466 and an EEV CCD02-06 silicon CCD sensors, working in a Multi-Pinned Phase (MPP) mode has been evaluated, in view of their possible use in the vertex detector of a future linear collider. We have examined the influence of the electron irradiation from a beta-source with fluencies up to 4.3 x 10(12) e(-)/cm(2) on the parameters of the CCD sensors such as dark current, dark current spikes, drive pulse voltages and charge transfer inefficiency (CTI). The changes of the parameters of the devices resulting from the irradiation are reported and discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:182 / 187
页数:6
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