Epitaxial growth of transparent tin oxide films on (0001) sapphire by pulsed laser deposition

被引：33

作者：

Tien, L. C. ^{[1
]}

Norton, D. P. ^{[1
]}

Budai, J. D. ^{[2
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

来源：

MATERIALS RESEARCH BULLETIN | 2009年 / 44卷 / 01期

关键词：

Oxides; Thin films; Laser deposition; BIAXIALLY TEXTURED NI; SNO2; THIN-FILMS; OPTICAL-PROPERTIES; GAS SENSOR; FERROMAGNETISM; SUPERLATTICES;

D O I：

10.1016/j.materresbull.2008.09.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of epitaxial SnO2 on (0 0 0 1) sapphire using pulsed laser deposition is examined. X-ray diffraction analysis shows that the films are highly a-axis oriented SnO2 with the rutile structure. Three distinct symmetry-equivalent in-plane epitaxial orientations were observed between the film and substrate. With increasing growth temperature, both the growth rate and surface roughness increase with columnar grain formation. Carrier concentration ranged from 10(17) to 10(19) cm(-3), with mobility of 0.5-3 cm(2)/V s. The resistivity of the films increases with increasing growth temperature, suggesting a lower density of oxygen vacancy-related defects formed during high temperature deposition. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：6 / 10

页数：5

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