An equivalent-circuit model for shunt-connected coplanar microelectromechanical system switches for high frequency applications

被引:17
作者
Bartolucci, Giancarlo [1 ,2 ]
Marcelli, Romolo [2 ]
Catoni, Simone [2 ]
Margesin, Benno [3 ]
Giacomozzi, Flavio [3 ]
Mulloni, Viviana [3 ]
Farinelli, Paola [4 ]
机构
[1] Univ Roma Tor Vergata, Dept Elect Engn, Via Politecn 1, I-00133 Rome, Italy
[2] CNR, IMM Roma, I-00133 Rome, Italy
[3] Fdn Bruno Kessler, Ctr Ric Sci & Tecnol, I-38050 Povo, TN, Italy
[4] Univ Perugia, Dept Elect & Informat Engn, I-06125 Perugia, Italy
关键词
D O I
10.1063/1.3003568
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, a circuit model to predict the microwave response of a shunt-connected capacitive microelectromechanical coplanar switch is proposed. The numerical values of the lumped elements composing the equivalent circuit are computed by means of a fully analytic approach. In particular, the contribution of resistive and inductive parasitic elements has been evaluated by using closed-form expressions. Configurations characterized by different technological solutions have been obtained and modeled. Simulations performed with the proposed approach correlate very well with actual measurements. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3003568]
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页数:8
相关论文
共 18 条
[1]  
[Anonymous], 1992, Foundations for Microstrip Circuit Design
[2]   Contact resistance study of noble metals and alloy films using a scanning probe microscope test station [J].
Chen, L. ;
Lee, H. ;
Guo, Z. J. ;
McGruer, N. E. ;
Gilbert, K. W. ;
Mall, S. ;
Leedy, K. D. ;
Adams, G. G. .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)
[3]   Design and fabrication of a gold electroplated electromagnetic and electrostatic hybrid MEMS relay [J].
Guan, S ;
Vollmers, K ;
Subramanian, A ;
Nelson, BJ .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
[4]   Dielectric properties of noncrystalline HfSiON [J].
Koike, M ;
Ino, T ;
Kamimuta, Y ;
Koyama, M ;
Kamata, Y ;
Suzuki, M ;
Mitani, Y ;
Nishiyama, A .
PHYSICAL REVIEW B, 2006, 73 (12)
[5]   Lumped element modelling of coplanar series RF MEMS switches [J].
Marcelli, R ;
Bartolucci, G ;
Minucci, G ;
Margesin, B ;
Giacomozzi, F ;
Vitulli, F .
ELECTRONICS LETTERS, 2004, 40 (20) :1272-1274
[6]   Temperature study of the dielectric polarization effects of capacitive RF MEMS switches [J].
Papaioannou, G ;
Exarchos, MN ;
Theonas, V ;
Wang, GA ;
Papapolymerou, J .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (11) :3467-3473
[7]   Effects of dielectric charging on fundamental forces and reliability in capacitive microelectromechanical systems radio frequency switch contacts [J].
Patton, Steven T. ;
Zabinski, Jeffrey S. .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)
[8]   RF MEMS switches with enhanced power-handling capabilities [J].
Peroulis, D ;
Pacheco, SP ;
Katehi, LPB .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (01) :59-68
[9]   CAD MODELS OF LUMPED ELEMENTS ON GAAS UP TO 18 GHZ [J].
PETTENPAUL, E ;
KAPUSTA, H ;
WEISGERBER, A ;
MAMPE, H ;
LUGINSLAND, J ;
WOLFF, I .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (02) :294-304
[10]  
RABINOV VL, 1997, P INT C SOL STAT SEN