Raman analyses of co-phasing and hysteresis behaviors in V2O3 thin film

被引:33
作者
Chen, Xiang-Bai [1 ,2 ]
Shin, Jun-Hwan [3 ,4 ]
Kim, Hyun-Tak [3 ,4 ]
Lim, Yong-Sik [1 ,2 ]
机构
[1] Konkuk Univ, Dept Nano Sci & Mech Engn, Chungju 380701, South Korea
[2] Konkuk Univ, Nanotechnol Res Ctr, Chungju 380701, South Korea
[3] Univ Sci & Technol, Sch Adv Device Technol, Taejon 305350, South Korea
[4] Elect & Telecommun Res Inst, Creat Res Ctr Met Insulator Transit, Taejon 305700, South Korea
基金
新加坡国家研究基金会;
关键词
V2O3; Raman scattering; phase transition; co-phasing; hysteresis; METAL-INSULATOR-TRANSITION; VO2; MICROSCOPY;
D O I
10.1002/jrs.4112
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
We present the studies of the phase transition behaviors of V2O3 thin film using temperature-dependent Raman scattering spectroscopy. Our results show that in both the cooling and heating processes of V2O3 thin film, the phase transition occurs gradually but not suddenly, contrary to that in single crystal. The coexistence of both the metal and insulator phases with co-phasing ?Tc larger than 30?K is observed in both the cooling and heating processes. We discuss that this large co-phasing ?Tc should be distinguished with the large hysteresis ?Th reported in nanostructures. In addition, our discussions indicate that co-phasing ?Tc and hysteresis ?Th would be mainly correlated with stress and defect states in sample, respectively. Furthermore, our Raman analyses suggest that stress would also induce phase transitions in V2O3, and the stress (pressure)-induced phase transitions would behave differently comparing with the temperature-induced transitions under normal pressure. Copyright (c) 2012 John Wiley & Sons, Ltd.
引用
收藏
页码:2025 / 2028
页数:4
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