Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

被引：95
作者：
Ducatteau, D [1 ]
Minko, A
Hoël, V
Morvan, E
Delos, E
Grimbert, B
Lahreche, H
Bove, P
Gaquière, C
De Jaeger, JC
Delage, S
机构：
[1] Univ Lille, CNRS, UMR 8520, IEMN TIGER, F-59652 Villeneuve Dascq, France
[2] TRT TIGER, F-91400 Orsay, France
[3] PICOGIGA Int, F-91971 Courtaboeuf, France
来源：
IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 01期
关键词：
AlGaN/GaN; high electron mobility transistors (HEMTs); power density; Si (111); trapping effects;
D O I：
10.1109/LED.2005.860385
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum do current density of 1 A/mm and an extrinsic current gain cutoff frequency (F-T) of 50 GHz are achieved for a 0.25 mu m gate length device. Pulsed and large signal measurements show the good quality of the epilayer and the device processing. The trapping phenomena are minimized and consequently an output power density of 5.1 W/mm is reached at 18 GHz on a 2 x 50 x 0.25 mu m(2) HEMT with a power gain of 9.1 dB.
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收藏
页码：7 / 9
页数：3
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