In-Pixel Temperature Sensors with an Accuracy of ±0.25 °C, a 3σ Variation of ±0.7 °C in the Spatial Domain and a 3σ Variation of ±1 °C in the Temporal Domain

被引：4

作者：

Abarca, Accel ^{[1
]}

Theuwissen, Albert ^{[1
,2
]}

机构：

[1] Delft Univ Technol, EWI, Microelect, Elect Instrumentat Lab, NL-2628 CD Delft, Netherlands

[2] Harvest Imaging, B-3960 Bree, Belgium

来源：

MICROMACHINES | 2020年 / 11卷 / 07期

关键词：

in-pixel temperature sensors; Tixel; dark current; CMOS image sensor; CMOS IMAGE SENSOR; DARK CURRENT; BANDGAP; PHOTODIODE; CAMERA;

D O I：

10.3390/mi11070665

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

This article presents in-pixel (of a CMOS image sensor (CIS)) temperature sensors with improved accuracy in the spatial and the temporal domain. The goal of the temperature sensors is to be used to compensate for dark (current) fixed pattern noise (FPN) during the exposure of the CIS. The temperature sensors are based on substrate parasitic bipolar junction transistor (BJT) and on the nMOS source follower of the pixel. The accuracy of these temperature sensors has been improved in the analog domain by using dynamic element matching (DEM), a temperature independent bias current based on a bandgap reference (BGR) with a temperature independent resistor, correlated double sampling (CDS), and a full BGR bias of the gain amplifier. The accuracy of the bipolar based temperature sensor has been improved to a level of +/- 0.25 degrees C, a 3 sigma variation of +/- 0.7 degrees C in the spatial domain, and a 3 sigma variation of +/- 1 degrees C in the temporal domain. In the case of the nMOS based temperature sensor, an accuracy of +/- 0.45 degrees C, 3 sigma variation of +/- 0.95 degrees C in the spatial domain, and +/- 1.4 degrees C in the temporal domain have been acquired. The temperature range is between -40 degrees C and 100 degrees C.

引用

页数：16

共 30 条

[1] Integration of 555 temperature sensors into a 64 x 192 CMOS image sensor [J].

Abarca, Accel ;

Xie, Shuang ;

Markenhof, Jules ;

Theuwissen, Albert .

SENSORS AND ACTUATORS A-PHYSICAL, 2018, 282 :243-250

[2] Camera on a chip [J].

Ackland, B ;

Dickinson, A .

1996 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 1996, 39 :22-25

[3] CMOS Active Pixel Sensor (APS) imager for scientific applications [J].

Ay, SU ;

Lesser, M ;

Fossum, ER .

SURVEY AND OTHER TELESCOPE TECHNOLOGIES AND DISCOVERIES, 2002, 4836 :271-278

[4]

Baranov PS, 2017, IEEE NW RUSS YOUNG, P635, DOI 10.1109/EIConRus.2017.7910636

[5]

Coath R., 2009, P TOP WORKSH EL PART, P57

[6] CMOS image sensors [J].

El Gamal, A ;

Eltoukhy, H .

IEEE CIRCUITS & DEVICES, 2005, 21 (03) :6-20

[7] CMOS image sensors: Electronic camera-on-a-chip [J].

Fossum, ER .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (10) :1689-1698

[8]

FOSSUM ER, 1993, P SOC PHOTO-OPT INS, V1900, P2, DOI 10.1117/12.148585

[9] A Review of the Pinned Photodiode for CCD and CMOS Image Sensors [J].

Fossum, Eric R. ;

Hondongwa, Donald B. .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2014, 2 (03) :33-43

[10]

Gilbert B., 1993, U.S. Patent, Patent No. [5,195,827, 5195827]

← 1 2 3 →